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| NTHS4501N Power MOSFET 30 V, 6.7 A, Single N-Channel, ChipFETt Package Features * Planar Technology Device Offers Low RDS(on) and Fast Switching Speed * Leadless ChipFET Package has 40% Smaller Footprint than TSOP-6. * * Ideal Device for Applications Where Board Space is at a Premium. ChipFET Package Exhibits Excellent Thermal Capabilities Where Heat Transfer is Required. Pb-Free Package is Available in a ChipFET Package V(BR)DSS 30 V http://onsemi.com RDS(on) Typ 30 mW @ 10 V ID Max 6.7 A 40 mW @ 4.5 V Applications * Buck and Boost Converters * Optimized for Battery and Load Management Applications in Portable Equipment such as Notebook Computers, MP3 Players, Cell Phones, Digital Cameras, Personal Digital Assistants and Other Portable Applications Charge Control in Battery Chargers G D * S N-Channel MOSFET MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t5s Power Dissipation (Note 1) Steady State t5s Pulsed Drain Current TA = 25C TA = 85C TA = 25C TA = 25C TA = 85C TA = 25C IDM TJ, TSTG IS TL PD Symbol VDSS VGS ID Value 30 20 4.9 3.5 6.7 1.3 0.7 2.5 20 -55 to 150 1.1 260 A C D2 M G = Specific Device Code = Month Code = Pb-Free Package W Unit V V A 1 ChipFET CASE 1206A STYLE 1 DDDS D2 M G 1 DDDG 8 MARKING DIAGRAM AND PIN ASSIGNMENT tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) ORDERING INFORMATION A C Device NTHS4501NT1 NTHS4501NT1G Package ChipFET ChipFET (Pb-Free) Shipping 3000/Tape & Reel 3000/Tape & Reel THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient - Steady State (Note 1) Junction-to-Foot (Drain) Steady State (Note 1) Junction-to-Ambient - t 5 s (Note 1) Symbol RqJA RqJF RqJA Max 95 20 50 Unit C/W For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq. pad size (Cu area = 1.127 in sq [1 oz] including traces). (c) Semiconductor Components Industries, LLC, 2007 1 February, 2007 - Rev. 4 Publication Order Number: NTHS4501N/D NTHS4501N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS VGS = 0 V, VDS = 24 V TJ = 25C TJ = 125C Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On-Resistance VGS(TH) VGS(TH)/TJ RDS(on) VGS = 10 V, ID = 4.9 A VGS = 4.5 V, ID = 3.9 A Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf VGS = 10 V, VDS = 15 V, ID = 1.0 A, RG = 6.0 W 4.0 11 17 7.5 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = 10 V, VDS = 15 V, ID = 4.9 A VGS = 0 V, f = 1.0 MHz, VDS = 24 V 462 137 32 9.1 0.7 1.3 1.8 nC pF gFS VDS = 10 V, ID = 4.9 A VGS = VDS, ID = 250 mA 1.0 1.6 4.0 30 40 15 38 50 S 2.0 V mV/C mW IGSS VDS = 0 V, VGS = 20 V VGS = 0 V, ID = 250 mA 30 31 30 1.0 10 100 nA V mV/C mA Symbol Test Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD tRR ta tb QRR VGS = 0 V, IS = 1.1 A, dIS/dt = 90 A/ms VGS = 0 V, IS = 1.1 A TJ = 25C 0.75 19.1 11.9 7.3 13 nC 1.2 V ns 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTHS4501N TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 10 9 ID, DRAIN CURRENT (AMPS) 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 2.4 V 2.2 V 8 9 2.6 V 3.2 V 10 V 3.0 V TJ = 25C 2.8 V ID, DRAIN CURRENT (AMPS) VDS 10 V 10 8 6 4 2 0 1.0 -55C 25C TJ = 100C 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.06 Figure 2. Transfer Characteristics 0.19 0.17 0.15 0.13 0.11 0.09 0.07 0.05 0.03 0.01 1 2 3 4 5 6 7 ID = 4.9 A TJ = 25C TJ = 25C 0.05 VGS = 4.5 V 0.04 VGS = 10 V 0.03 0.02 2 4 6 8 10 ID, DRAIN CURRENT (AMPS) 8 9 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3. On-Resistance vs. Gate-to-Source Voltage 2 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 10 -25 0 25 50 75 100 125 150 ID = 4.9 A VGS = 10 V IDSS, LEAKAGE (nA) 1000 10000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150C 100 TJ = 100C 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTHS4501N TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 1000 VGS = 0 V C, CAPACITANCE (pF) 800 TJ = 25C 10 9 8 7 6 5 4 3 2 1 0 0 ID = 4.9 A TJ = 25C 2 4 6 8 QG, TOTAL GATE CHARGE (nC) 4 0 10 QGS QGD 8 VDS VGS QT 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 16 600 CISS 400 COSS CRSS 0 0 18 12 24 DRAIN-TO-SOURCE VOLTAGE (VOLTS) 6 30 12 200 Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 1000 IS, SOURCE CURRENT (AMPS) VDD = 15 V ID = 1.0 A VGS = 10 V t, TIME (ns) 100 5 VGS = 0 V TJ = 25C 4 3 td(off) 10 tf tr td(on) 2 1 0 0.3 1 1 10 RG, GATE RESISTANCE (OHMS) 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTHS4501N PACKAGE DIMENSIONS ChipFETt CASE 1206A-03 ISSUE H D 8 7 6 5 q L 5 6 3 7 2 8 1 HE 1 2 3 4 E 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE. 4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL AND VERTICAL SHALL NOT EXCEED 0.08 MM. 5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS. 6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD SURFACE. DIM A b c D E e e1 L HE q MILLIMETERS NOM MAX 1.05 1.10 0.30 0.35 0.15 0.20 3.05 3.10 1.65 1.70 0.65 BSC 0.55 BSC 0.28 0.35 0.42 1.80 1.90 2.00 5 NOM MIN 1.00 0.25 0.10 2.95 1.55 INCHES NOM 0.041 0.012 0.006 0.120 0.065 0.025 BSC 0.022 BSC 0.011 0.014 0.071 0.075 5 NOM MIN 0.039 0.010 0.004 0.116 0.061 MAX 0.043 0.014 0.008 0.122 0.067 e1 e b c A 0.05 (0.002) 0.017 0.079 STYLE 1: PIN 1. DRAIN 2. DRAIN 3. DRAIN 4. GATE 5. SOURCE 6. DRAIN 7. DRAIN 8. DRAIN SOLDERING FOOTPRINTS* 2.032 0.08 2.032 0.08 1 1 1.727 0.068 2.362 0.093 0.635 0.025 PITCH 2.362 0.093 8X 8X 0.457 0.018 0.66 0.026 2X 2X mm inches 0.457 0.018 0.66 0.026 mm inches Basic *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Style 1 http://onsemi.com 5 NTHS4501N ChipFET is a trademark of Vishay Siliconix ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 6 NTHS4501N/D |
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